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自旋转移力矩磁隧道结(STT-MTJ)是一种新兴的非易失性存储单元。因为有着掉电后数据不丢失、无限的写次数、与CMOS工艺兼容、不会增加器件面积以及良好的可缩放性等诸如多优点而得到了广泛的研究。但是由于目前的工艺厂商尚未推出相应的模型,研究者难以先期使用该技术进行电路设计。文章介绍了STT-MTJ的工作原理,详细研究了使用Verilog-A对STT-MTJ建模的思路,并在HSPICE中进行了仿真验证,为后续的STT-MTJ研究奠定了基础。
Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a new type of nonvolatile memory cell. Because of the benefits of having no data loss, unlimited number of writes, compatibility with CMOS processes, no increase in device area, and good scalability, after power-down, many studies have been conducted. However, due to the current technology vendors have not yet introduced the corresponding model, researchers are difficult to advance the use of the technology circuit design. The article introduces the working principle of STT-MTJ, studies the idea of modeling STT-MTJ with Verilog-A in detail and simulates it in HSPICE, which lays the foundation for the subsequent STT-MTJ research.