论文部分内容阅读
针对高线性功率放大器在通信领域的应用,设计了一款模拟预失真功率放大器芯片。对预失真器原理与结构进行了分析,采用兰格耦合器提高信号隔离度,利用T型结构电阻网络增加衰减量,给出了线性功率放大器的设计方案,通过抵消主功率放大器产生的三阶分量来提高线性度。利用仿真软件对预失真电路进行仿真优化,最后基于GaAs微波功率器件工艺成功研制了模拟预失真功率放大器。实验结果表明,工作频率在10.1 GHz、1 d B压缩点输出功率(P_(o(1dB)))的条件下,测得功率放大器自身的三阶交调失真比为-20 dBc,引入这种新型预失真技术后,功率放大器在Po(1 dB)下的三阶交调失真比达到-45.6 dBc,三阶交调失真改善量约25.6 dB。功率放大器的芯片面积为4.3 mm×3.00 mm。
Aiming at the application of high linearity power amplifier in the field of communication, an analog predistortion power amplifier chip is designed. The principle and structure of the predistorter are analyzed. The Lange coupler is used to improve the signal isolation. The T-structure resistor network is used to increase the attenuation. The design scheme of the linear power amplifier is given. By canceling the third order Component to improve linearity. The simulation software is used to simulate and optimize the predistortion circuit. Finally, an analog pre-distortion power amplifier is successfully developed based on the GaAs microwave power device technology. The experimental results show that the third-order intermodulation distortion of the PA is -20 dBc when the operating frequency is at 10.1 GHz and the output power (P_ (1 dB)) at 1 d B compression point is introduced. After the new predistortion technique, the third-order intermodulation distortion of the power amplifier at Po (1 dB) reaches -45.6 dBc, and the third-order intermodulation distortion improvement is about 25.6 dB. The power amplifier’s chip area is 4.3 mm × 3.00 mm.