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  5. Photoluminescence Properties of Si1—xGex／Si Strained Layer Structures

Photoluminescence Properties of Si1—xGex／Si Strained Layer Structures

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：hzy11
【摘 要】
：
The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years.The photoluminescence has be-come
【作 者】
：
PENGYingcai 等 
【机 构】
：
HebeiUniversity
【出 处】
：
半导体光子学与技术：英文版
【发表日期】
：
1996年3期
【关键词】
：
应变层超点阵 光致发光 光电子器件 量子阱 Strained Layer Superlattices  Photoluminescence Properties 
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The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years.The photoluminescence has be-come a brisker subject in the studies of its various optical properties.A research develop-ment to
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