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本文对液相外延生长HgCdTe及其汞压控制进行了研究。在理论上对开管滑动系统中汞损失的影响作了分析和计算,提出了准平衡汞压的方法。在实验中设计制作了独特的汞回流装置,实现了对汞压的控制。通过生长工艺的条件实验,得到了各工艺参数影响外延片性能的关系,制备出表面光亮,组分为x=0.211±0.002,x=0.28±0.001的Hg_(1-x)Cd_xTe外延片。在77°K下n型(未退火)和P型外延片的迁移率分别为3.36×10~3cm~2/V·s和1.81×10~3cm~2/V·s,载流子浓度分别为1.09×10~(15)cm~(-3)和1.04×10~(16)cm~(-3)。
In this paper, liquid-phase epitaxial growth HgCdTe and its mercury pressure control were studied. In theory, the influence of mercury loss in open tube sliding system was analyzed and calculated, and the method of quasi-equilibrium mercury pressure was put forward. In the experiment designed a unique mercury reflux device, to achieve the control of mercury pressure. Through the experimental conditions of the growth process, the relationship between the parameters of the epitaxial wafer and the properties of the epitaxial wafer was obtained, and the Hg_ (1-x) Cd_xTe epitaxial wafer with bright surface and the composition of x = 0.211 ± 0.002 and x = 0.28 ± 0.001 was prepared. The mobility of n-type (unannealed) and P-type epitaxial wafers at 77 ° K is 3.36 × 10 -3 cm -2 / V · s and 1.81 × 10 -3 cm -2 / V · s, respectively. The carrier concentrations are respectively 1.09 × 10 ~ (15) cm ~ (-3) and 1.04 × 10 ~ (16) cm ~ (-3).