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在Al/ZnSe:Mn/n-GaAs系统中观察到了阈值电压低于60V的明亮的DC电致发光(EL)。指出在n-GaAs和ZnSe之间的异质结接触起高效电子注入器的作用,它大大降低了电致发光的阈值电压。可以存在两种电子注入过程。一种是在异质结位垒上从n-GaAs往ZnSe注入电子,另一种是来自异质结界面态的内场电子发射。依赖于电压的亮度和发射光谱之实验结果暗示发射机理是以高能电子和Mn中心的碰撞造成的直接碰撞激发为基础的。通过分析亮度波形和它随注入数量的变化可以弄清这些现象。
Bright DC electroluminescence (EL) with a threshold voltage lower than 60V was observed in the Al / ZnSe: Mn / n-GaAs system. It is pointed out that the heterojunction between n-GaAs and ZnSe is responsible for the efficient electron injector, which greatly reduces the threshold voltage of electroluminescence. There can be two types of electron injection processes. One is the injection of electrons from n-GaAs into ZnSe at the heterojunction barrier and the other from the internal field electron emission from the heterojunction interface state. Experimental results that depend on the brightness and emission spectra of the voltage imply that the emission mechanism is based on the direct collision excitation caused by the collision of energetic electrons and Mn centers. These phenomena can be understood by analyzing the brightness waveform and its variation with the number of injections.