富士通研究所日前宣布,通过在晶体管沟道部位采用SiGe(硅锗)材料,并将沟道方向设定成特定方向(<100>方向),从而成功地开发出了低耗电量的高速P型MOS晶体管。之所以能够实现此次的技术,首先,在理论上进行了这样的预测;与其他方向相比,挠曲SiGe的<100>方向上的载流子迁移率将会大幅提高,其次,还运用了低温加工技术和SiGe结晶生长技术等。此次开发出的晶体管的特点如下: Fujitsu Laboratories has announced the successful development of low-power high-speed P (SiGe) materials by setting the channel direction to a specific direction (<100> direction) Type MOS transistor. The reason for this realization of the technology is that, first of all, such a prediction is theoretically made; the carrier mobility in the <100> direction of the flexed SiGe will be significantly increased as compared with other directions, and secondly, Low temperature processing technology and SiGe crystal growth technology. The characteristics of the transistor developed are as follows: