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石墨烯因其优异而独特的性能,自发现以来便受到了广泛的关注.为了实现石墨烯的进一步应用,可控制备大面积、高质量的石墨烯便成为研究人员需要首先攻克的难题.利用传统方法在金属基底上催化生长的石墨烯,需要先转移到介电层上才能进行后续的器件构筑.与之相比,介电层表面上直接生长石墨烯后,就可直接利用目前的硅加工工艺制备器件,从而避免因转移而引起的污染、破损,进而有望得到高质量、无污染的石墨烯样品.介绍了近年来介电层上直接生长石墨烯的研究进展,其中包括在各种传统介电层材料和新型六方氮化硼薄膜上制备石墨烯的各种方法.总结展望了介电层表面石墨烯制备的主要挑战及发展方向.
Due to its excellent and unique properties, graphene has attracted wide attention since it was discovered.In order to realize the further application of graphene, graphene, which is controlled by large area and high quality, has become the first problem that researchers need to overcome. Conventionally, graphene, which has been catalytically grown on a metal substrate, needs to be transferred to a dielectric layer for subsequent device fabrication. In contrast, when graphene is directly grown on the surface of a dielectric layer, the current silicon Processing technology to prepare the device so as to avoid the pollution and breakage caused by the transfer and to expect the high quality and pollution free graphene sample.The research progress of direct growth of graphene on the dielectric layer in recent years is introduced, Traditional Dielectric Materials and New Methods of Preparing Graphene on Hexagonal Boron Nitride Films The main challenges and the development of graphene on the surface of dielectric layer are summarized.