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美国通用电气(GE)公司利用它的新外延技术制成了高质量的InSb晶片之后,进而研制出了性能大为提高的InSb线性红外列阵。测试表明,由外延InSb晶片制成的这种探测器可以在110K工作,而其探测率仍然相当于由块晶片制成的探测器在80K时的探测率。GE公司认为,这一新工艺将对那些由于致冷要求十分严格,以致不适宜使用InSb探测器的空间应用发生巨大的影响。要将在块InSb晶片上制成的列阵冷却到80K,就需要使用固态低温蒸发致冷器(这种致冷器的工作寿命短得不可接受),或闭合循环致冷装置(这种装置能耗高,而
The United States General Electric (GE) company made use of its new epitaxial technology to produce high-quality InSb chip, and then developed a greatly improved InSb linear array infrared. Testing has shown that such detectors made of epitaxial InSb wafers can operate at 110K with a detection rate still corresponding to that of detectors made of bulk wafers at 80K. GE believes the new process will have a huge impact on space applications that are not suitable for InSb detectors due to the stringent cooling requirements. Cooling an array made on a bulk InSb wafer to 80K requires the use of a solid state cryogenic evaporative cooler, which has an unacceptably short operating life, or a closed cycle cryogenic device (such a device High energy consumption, however