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介绍了一种基于CSMC 0.5-μm 2P3M n-阱混合信号CMOS工艺的高阶温度补偿的带隙参考源。该CMOS带隙参考源利用了Buck电压转换单元和与温度无关的电流,提供了一种对基极-发射极电压VBE的高阶温度补偿。它还采用共源共栅结构以提高电源抑制比。在5 V电源电压下,温度变化范围为-20~100℃时,该带隙参考源的温度系数为5.6ppm/℃。当电源电压变化范围为4~6V时,带隙参考源输出电压的变化为0.4mV。
A high-order temperature compensated bandgap reference source based on the CSMC 0.5-μm 2P3M n-well mixed signal CMOS process is presented. The CMOS bandgap reference source utilizes a Buck voltage conversion cell and a temperature-independent current, providing a high-order temperature compensation for the base-emitter voltage VBE. It also uses a cascode structure to improve the power supply rejection ratio. The bandgap reference source has a temperature coefficient of 5.6ppm / ° C at a temperature change of -20 to 100 ° C at a supply voltage of 5 V. When the power supply voltage varies from 4 to 6V, the output voltage of the bandgap reference source changes by 0.4mV.