Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO 2 matrix is compared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity (I R ) as a function of annealing temperature and implanted Si ion dose. The I R increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization varying via the annealing temperature. The increase in I R with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs. Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO 2 matrix is ​​compared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity (IR) as a function of annealing temperature and implanted Si ion dose This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization varying via the annealing temperature. The increase in IR with implanted Si ion dose is also observed. that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.