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研究了精抛液中各组分对Cu/Ta去除速率的影响。在分别考察磨料质量分数、Ⅱ型螯合剂、活性剂和双氧水等各组分对Cu/Ta去除速率的影响后,研发了磨料质量分数为2%,Ⅱ型螯合剂体积分数为0.35%,活性剂体积分数为2%,H2O2体积分数为2%的FA/O精抛液。并在MIT854布线片上进行了精抛测试。结果显示,精抛12 s之后,100-100线条处高低差从精抛前的76.7 nm降低为63.2 nm,而50-50线条处高低差从精抛前的61.3 nm降低为59.8 nm。并且,经过FA/O精抛液精抛后粗抛后产生的尖峰也有所减小,台阶趋于平坦。精抛后,100-100和50-50处的高低差均小于70 nm,能够达到产业化指标。
The effects of various components in the polishing solution on Cu / Ta removal rate were studied. After respectively investigating the effect of the abrasive mass fraction, chelator Ⅱ, active agent and hydrogen peroxide on the removal rate of Cu / Ta, the effects of the mass fraction of the abrasive, the volume fraction of Ⅱ chelator of 0.35%, the activity Agent volume fraction of 2%, H2O2 volume fraction of 2% FA / O polishing liquid. And in the MIT854 wiring on the polished test. The results showed that after the fine polishing, the height difference between 100 and 100 lines decreased from 76.7 nm to 63.2 nm before fine polishing, while the height difference between 50 and 50 lines decreased from 61.3 nm to 59.8 nm before fine polishing. And, after the FA / O fine polishing throw rough thrown after the spike also decreased, the stairs tend to be flat. After precision polishing, the height difference between 100-100 and 50-50 is less than 70 nm, which can reach the industrialization index.