在新一代功率半导体方面,AlGaN比GaN更出色。这一研究成果是美国桑迪亚国家实验室(Sandia National Laboratories)与美国Avogy公司联名在“APEC 2016”上发表的。登台演讲的Robert J.Kaplar公布了用AlGaN试制的功率元件的特性。AlGaN与GaN相比带隙更宽、绝缘破坏强度更高,有望制造出损失比GaN低的功率元件。AlGaN是 In the new generation of power semiconductors, AlGaN is better than GaN. The result of this research was published jointly by Sandia National Laboratories of the United States and Avogy Corporation of the United States on “APEC 2016.” Robert J. Kaplar, who made a speech on the stage, announced the features of a power device prototyped with AlGaN. AlGaN has a wider band gap and higher dielectric breakdown strength than GaN, making it possible to fabricate power devices with lower losses than GaN. AlGaN is