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InP/InGaAs/InP DHBT具有频带宽、电流驱动能力强、线性好、相位噪声低和阈值电压一致性好等优点成为研究热点。通过优化外延材料结构设计和采用四元InGaAsP缓变层消除集电结电流阻塞效应;改进发射极-基极自对准工艺和集电区台面侧向腐蚀工艺,降低Rb和Cbc乘积;优化PI钝化工艺和空气桥互联等工艺,实现了发射极面积为2μm×10μm的自对准InP/InGaAs/InP DHBT器件,其直流增益β约为25,击穿电压BVCEO≥7 V@10μA,在VCE=4 V,Ic=10 mA下,截止频率fT=140 GHz,最高振荡频率fmax=200 GHz,优于同一外延片上的非自对准InP DHB器件,该器件将可应用于高速光通信和微波毫米波通信。
InP / InGaAs / InP DHBT has the advantages of wide frequency band, strong current driving ability, good linearity, low phase noise and good threshold voltage consistency. By optimizing the structure design of epitaxial material and quaternary InGaAsP graded layer, the blocking effect of collector junction current is eliminated. The emitter-base self-alignment process and the side-etching process of collector region are improved to reduce the product of Rb and Cbc. The optimized PI Passivation process and air bridge interconnection process to achieve a self-aligned InP / InGaAs / InP DHBT device with an emitter area of 2 μm × 10 μm with a DC gain β of about 25 and a breakdown voltage BVCEO of 7 V at 10 μA. VCE = 4 V, Ic = 10 mA, the cut-off frequency fT = 140 GHz and the maximum oscillation frequency fmax = 200 GHz are better than non-self-aligned InP DHB devices on the same epitaxial wafer and will be used in high-speed optical communications and Microwave millimeter wave communication.