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采用真空蒸镀方法在Si衬底上制备了Si/Au、Si/Ni/Au和Si/Ti/Au结构多层膜,进行多种条件下的退火实验,研究了不同黏附层对Au/Si共晶体系中硅扩散的影响。实验结果表明,黏附层对硅的扩散起到阻挡作用,Ti层与Ni层作为阻挡层在较低温度下发生失效,退火气氛对阻挡层的失效具有显著影响。这表明Au/Si体系中扩散阻挡层失效的机制并不是直接的固相反应。文章提出势垒模型来解释扩散阻挡层的失效机制。
The multilayers of Si / Au, Si / Ni / Au and Si / Ti / Au films were prepared on Si substrates by vacuum evaporation. The annealing experiments under various conditions were carried out. Effect of Silicon Diffusion on Eutectic System. The experimental results show that the adhesion layer has a barrier effect on the diffusion of silicon. The Ti layer and the Ni layer act as a barrier layer at a lower temperature, and the annealing atmosphere has a significant effect on the barrier layer failure. This indicates that the mechanism of the diffusion barrier failure in the Au / Si system is not a direct solid-phase reaction. The paper presents a barrier model to explain the failure mechanism of diffusion barrier.