The present paper focuses on study of graphene and strontium titanate(SrTiO_3 or STO) interface. An ambient pressure chemical vapour deposition(AP-CVD) setup is used to grow graphene on STO(110)substrates in the presence of methane, argon and hydrogen gases at 1000 °C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates.X-ray photoelectron spectroscopy(XPS) is carried out for elemental analysis of samples, and study their bonding with STO substrates. We employed the valence band spectrum to calculate the valence band offset(VBO) and conduction band offset(CBO) at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC(arranging pattern of carbon layers) stacked graphene layers. The present paper focuses on study of graphene and strontium titanate (SrTiO_3 or STO) interface. An ambient pressure chemical vapor deposition (AP-CVD) setup is used to grow graphene on STO (110) substrates in the presence of methane, argon and hydrogen gases at 1000 ° C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates. X-ray photoelectron We employed the valence band spectrum to calculate the valence band offset (VBO) and conduction band offset (CBO) at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC (arranging pattern of carbon layers) stacked graphene layers.