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本文在国内首次报道了LP－MOVPE法生长高质量的压、张应变交替InGaAsP多量子阶结构的研制过程及其材料的高精度X射线双晶摇摆衍射曲线和光致发光谱特性表征．在此材料基础之上制作的平面掩埋条形结构激光器经过双腔面镀增透射膜后，其TE模与TM模自发发射谱光强差为3dBm，呈现偏振补偿特性．
This paper reports for the first time in China the development of high-quality, strain-alternating InGaAsP MQW structures grown by the LP-MOVPE method and the characterization of its high-precision X-ray double crystal wobble diffraction curves and photoluminescence spectra. The planar buried strip laser fabricated on the basis of this material has a 3dBm difference in intensity between the TE mode and the TM mode spontaneous emission spectrum after being coated with the dual-cavity surface-enhanced transmission film, exhibiting polarization compensation characteristics.