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利用悬浮球模型和镜像电荷法计算了栅极调制纳米线的顶端表面电场,给出了场发射增强因子表达式β=1/2(3.5+L/r0+W),式中L与r0分别是纳米线长度与顶端表面曲率半径,W是由栅孔半径R、阴极与栅极间距d以及纳米线自身几何参数所决定的函数.结果表明,纳米线长径比对场增强因子的影响很显著;当阴极与栅极间距较近时,场增强因子随d的增加而减小,而当栅极处于无穷远时,纳米线场增强因子的表示式变成β0=3.5+L/r0;栅孔半径越小,场增强因子就越大,当栅孔半径趋于零时,场增强因子为β=β0+1.202(L/d)3.
The electric field of the top surface of the gate-modulated nanowire was calculated by using the suspension ball model and the image charge method. The expression of field emission enhancement factor β = 1/2 (3.5 + L / r0 + W) Is the length of the nanowire and the radius of curvature of the top surface and W is a function of the gate hole radius R, the distance d between the cathode and the gate, and the geometric parameters of the nanowire itself. The results show that the effect of the aspect ratio of nanowires on the field enhancement factor is very When the distance between the cathode and the gate is close, the field enhancement factor decreases with the increase of d, and when the gate is at infinity, the expression of the enhancement factor of the nanowire field becomes β0 = 3.5 + L / r0; The smaller the gate hole radius is, the larger the field enhancement factor is. When the gate hole radius approaches zero, the field enhancement factor is β = β0 + 1.202 (L / d) 3.