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通过对用ＭＯＣＶＤ（金属有机物化学气相沉积）方法在Ｓｉ衬底上生长的ＧａＡｓ外延薄膜，用不同激发强度下的近红外光致发光研究了液氮温度下峰值能量为１．１３ｅＶ和１．０４ｅＶ两个带谱的发光特性，表明这两个带均属于施主－受主对复合发光。由于发光带中存在着电子－声子耦合，所以应在施主－受主对复合发光能量表示式中计及Ｆｒａｎｋ－Ｃｏｎｄｏｎ位移，从而对复合发光能量表示式进行修正。通过对复合发光带能量随激发强度变化的实验曲线和理论表达式的拟合，确定了峰值为１．１３ｅＶ与１．０４ｅＶ这两个发光带深施主－受主对的束缚能之和分别为０．３００ｅＶ和０．４０１ｅＶ。
By using MOCVD (Metal Organic Chemical Vapor Deposition) method to grow GaAs epitaxial thin films on Si substrates, the near-infrared photoluminescence at different excitation intensities was used to study the peak energies at liquid nitrogen temperatures of 1.13eV and 1.04eV The luminescence properties of the two bands show that both bands belong to the donor-acceptor pair recombination luminescence. Due to the existence of electron-phonon coupling in the emission band, the Frank-Condon displacement should be accounted for in the donor-receiver-to-composite emission energy representation to correct for the composite emission energy representation. By fitting the experimental curves and theoretical expressions for the variation of the energy of the composite luminous band with the excitation intensity, the sum of the binding energy of the host-acceptor pair with the peak values of 1.13eV and 1.04eV was determined as 0.300 eV and 0.401 eV.