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借助半导体仿真工具Silvaco中所提供的工艺摸拟器(Athena)和器件摸拟器(Atlas),及L-Edit版图设计工具,设计了一款击穿电压高于-90 V、阈值电压为-4 V的p沟VDMOS器件。经实际流片测试,器件的导通电阻小于200 m!,跨导为5 S,栅-源泄漏电流和零栅电压时的漏-源泄漏电流均在纳安量级水平,二极管正向压降约为-1 V。采用2-D器件仿真方法以及相关物理模型对所设计的p沟VDMOS器件的单粒子烧毁(SEB)和单粒子栅击穿(SEGR)效应进行了分析和研究,并通过对所获得的器件样片采用钴-60“射线源进行辐照实验,研究了在一定剂量率、不同总剂量水平条件下辐照对所研制的p沟VDMOS器件相关电学参数的影响情况。
With the Athena and Atlas devices offered in the semiconductor simulation tool Silvaco and the L-Edit layout design tool, a device with a breakdown voltage higher than -90 V and a threshold voltage of - 4 V p-channel VDMOS device. The actual chip test, the device’s on-resistance of less than 200 m!, Transconductance of 5 S, gate-source leakage current and zero gate voltage drain-source leakage current are in the order of magnitude, the diode forward voltage Drop down to -1V. The single-particle destructive (SEB) and single-particle gate breakdown (SEGR) effects of the designed p-channel VDMOS devices are analyzed and studied by using the 2-D device simulation method and the related physical models. The obtained device samples The effects of irradiation on the electrical parameters of the developed p-channel VDMOS device were investigated under a certain dose rate and different total dose levels by using a cobalt-60 ”radiation source.