论文部分内容阅读
目前LSI正在逐年地向高密度化发展,它为电子学的发展做出了巨大的贡献。其生产的主要关键是微细加工技术,它要求尽可能地按照由投影和缩小曝光等方法所形成的微细抗蚀剂图形进行腐蚀。以往的等离子腐蚀由于各向同性而产生钻蚀,故难以实现微细化。因此,迫切希望一种不产生钻蚀的各向异性腐蚀技术。这种各向异性腐蚀是利用电场加速CF_4等反应性气体等离子体中的离子,使其具有方向性并利用它们对样品(硅片)进行冲击而实现的。此方法的大部分过程都可用平行板辉光放电装置来进行,目前在批量生产线中已陆续被采用。当然,电化学反应(ECR)放电形式也是今后必须注意的一种方法。
At present, LSI is being developed to a higher density every year, and it has made tremendous contributions to the development of electronics. The main key to its production is microfabrication technology, which requires etching as closely as possible to the fine resist pattern formed by projection and exposure reduction methods. Conventional plasma etching causes undercutting due to isotropy, making it difficult to achieve miniaturization. Therefore, there is an urgent need for an anisotropic etching technique that does not cause undercutting. This anisotropic etching is the use of an electric field to accelerate ions such as CF4 reactive gas plasma, making it directional and utilizing their impact on the sample (wafer). Most of the process of this method can be used parallel plate glow discharge device to carry out, the current batch production line has been gradually adopted. Of course, the form of electrochemical reaction (ECR) discharge is also a way to be aware of in the future.