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观察了ULSI中大马士革结构的Cu互连线的晶粒生长和晶体学取向 .分析了线宽及退火对Cu互连线显微结构及电徙动的影响 .Cu互连线的晶粒尺寸随着线宽的变窄而减小 .与平坦Cu膜相比 ,Cu互连线形成微小的晶粒和较弱的 (111)织构 .30 0℃、30min退火促使Cu互连线的晶粒长大、(111)织构发展 ,从而提高了Cu互连线抗电徙动的能力 .结果表明 ,Cu的扩散涉及晶界扩散与界面扩散 ,而对于较窄线宽的Cu互连线 ,界面扩散成为Cu互连线电徙动失效的主要扩散途径 .
The crystal growth and crystallographic orientation of the damascene Cu interconnects in ULSI were observed.The effect of wire width and annealing on the microstructures and electrical migration of Cu interconnects was analyzed.The variation of the grain size Compared with the flat Cu film, Cu interconnects formed tiny grains and weakened (111) texture. The annealing at 30 ℃ for 30min accelerated the grain growth of Cu interconnects The results show that the diffusion of Cu involves the grain boundary diffusion and interfacial diffusion, while for the Cu interconnect with narrower width, Interfacial diffusion has become the main diffusion route for the failure of Cu interconnect wire migration.