研究了半导体ＣｄＴｅ薄膜不同阴极电沉积条件（搅拌、加温）下，沉积电位与电流密度、沉积速率的关系。着重研究了沉积电位对ＣｄＴｅ膜层成份及导电类型的影响，通过控制沉积电位制备了不同导电类型的半导体ＣｄＴｅ薄膜。对沉积膜形貌和结构分析表明，室温搅拌条件下沉积的ＣｄＴｅ薄膜，整体均匀性好，呈非晶结构，氮气氛中高温退火后，ＣｄＴｅ膜沿一定方向有较明显取向。 The relationship between deposition potential and current density and deposition rate was investigated under different cathodic electrodeposition conditions (stirring and warming) of CdTe thin films. The effects of deposition potential on the composition and conductivity type of CdTe films were studied emphatically. Semiconductor CdTe films with different conductivity types were prepared by controlling deposition potentials. The morphology and structure of the deposited films show that the CdTe films deposited at room temperature have good overall uniformity and amorphous structure. After annealed at high temperature in nitrogen atmosphere, the CdTe films have obvious orientation along a certain direction.