论文部分内容阅读
本文分析了工艺参数和结构设计对a—Si:H薄膜光电二极管的光谱响应、灵敏度和暗电流等主要特性的影响,推导出元件外接负载时光生电压与光照度的关系式,并引入临界照度概念,定量地讨论了元件的输出线性精度。同时,本文给出了元件应用于数字照度计时的光谱修正和放大电路。检定结果表明,元件性能明显优于单晶硅光电二极管等传统光电元件,在可见光检测领域具有广阔的应用前景。
In this paper, the influence of process parameters and structure design on the main characteristics of a-Si: H thin-film photodiode such as spectral response, sensitivity and dark current are analyzed. The relationship between the photo-induced voltage and illuminance when an external load is derived is derived and the concept of critical illuminance , Discuss quantitatively the output linear precision of the component. At the same time, this paper gives the spectrum correction and amplification circuit of the components used in digital illumination timing. Verification results show that the performance of the component is obviously better than the traditional optoelectronic components such as monocrystalline silicon photodiodes and has broad application prospects in the field of visible light detection.