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介绍了一种新的近场光刻技术的基本原理及其在光刻方面的应用研究的最新进展。新技术的基本原理是:光远场照射,通过超分辨掩模产生光刻所需的超过衍射极限的近场光,利用夹在掩模和光刻胶中间的电介质保护层实现了近场光的最佳耦合,减小了线宽并大大提高了光刻速度。这种膜层结构叫超分辨近场结构(Super-RENS),是近年来发展起来的一种新的近场光学技术。
The basic principle of a new near field lithography technology and the latest research progress in the application of lithography are introduced. The basic principle of the new technology is that the optical far-field radiation generates near-diffraction-limited near-field light required for lithography through a super-resolution mask, and the near-field light is realized by using a dielectric protection layer sandwiched between the mask and the photoresist The optimal coupling reduces the line width and greatly increases the lithography speed. This film structure called super-resolution near-field structure (Super-RENS), is developed in recent years, a new near-field optical technology.