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ZnO作为宽禁带透明半导体材料在光电领域具有广阔应用前景,通过掺杂可改善其光电性能。本文从第一性原理理论计算和实验方面综述了掺杂对ZnO溶胶凝胶薄膜光电特性影响的最新进展。III、IV族及稀土元素掺杂可在ZnO导带底引入大量载流子,使费米能级进入导带,利于n型导电。I、IB族或V族元素掺杂可替代Zn或O原子位置,产生受主杂质能级,增加受主浓度,利于p型导电。单掺杂ZnO薄膜电阻率较高,共掺杂可提高杂质溶解度,减少自补偿作用,提高p型导电性。元素掺杂可调整ZnO带隙且与掺杂元素氧化物的带隙相关,Mg、Al、Ga、In掺杂使带隙增大,Cd掺杂则使带隙减小。指出需进一步探究掺杂ZnO薄膜的缺陷与能级结构,开展ZnO纳米晶和基于ZnO的多元复合薄膜研究等。
ZnO as a wide band-gap transparent semiconductor material in the field of optoelectronics has broad application prospects, through the doping can improve its optoelectronic properties. In this paper, the latest advances in the influence of doping on the photoelectric properties of ZnO sol-gel films are reviewed from the first-principles theoretical calculations and experiments. III, IV and rare earth elements doped ZnO conduction band at the end of the introduction of a large number of carriers, the Fermi level into the conduction band, which is conducive to n-type conductivity. I, IB group or V element doping can replace the position of Zn or O atoms, resulting acceptor impurity level, increasing the acceptor concentration conducive to p-type conductivity. Single-doped ZnO films with higher resistivity, co-doping can improve the impurity solubility, reduce self-compensation, improve p-type conductivity. Element doping can adjust the ZnO bandgap and is related to the bandgap of the oxide of the doping element. The doping of Mg, Al, Ga and In increases the bandgap, and the doping of Cd decreases the bandgap. Pointed out that the need to further explore the defects of doped ZnO thin films and energy level structure, to carry out ZnO nanocrystal and ZnO-based composite thin film research.