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半导体器件大部分都是在外延片上制成的,测定外延层纵向浓度分布是否符合设计要求,是一个重要的质量指标。本仪器是应用所谓二次谐波原理来进行测试的。将被测样品形成肖特基结,用一小的射频电流来激励肖特基二极管。当在肖特基结中流过恒幅正弦电流Isinωt时,肖特基结两端的附加电压为:
Most of the semiconductor devices are made on the epitaxial wafer. It is an important quality index to determine whether the vertical concentration distribution of the epitaxial layer meets the design requirements. The instrument is the application of the so-called second harmonic theory to test. Form a Schottky junction with the sample under test and excite the Schottky diode with a small RF current. When a constant amplitude sinusoidal current, Isinωt, flows through the Schottky junction, the additional voltage across the Schottky junction is: