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5. Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method

Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method

来源 :武汉理工大学学报（材料科学版）（英文版） | 被引量 : 0次 | 上传用户：hunshixiaozi

【作 者】

：

LIU Cuixia YANG Yanqing LUO Xian 

【机 构】

：

School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710032, China;Sc

【出 处】

：

武汉理工大学学报（材料科学版）（英文版）

【发表日期】

：

2012年5期

【关键词】

：

SiC film chemical vapor deposition kinetic monte carlo 

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