论文部分内容阅读
研究了金刚石薄膜在 Ｗ Ｃ６ ％ Ｃｏ 硬质合金、金属 Ｗ 和单晶 Ｓｉ 片上的成核特点。实验结果表明，金刚石薄膜在上述衬底材料上的成核特点和成核机制不同。用于衬底研磨预处理的金刚石微粉粒度对金刚石在单晶 Ｓｉ 片上的成核密度有较大影响，而对在 Ｗ Ｃ６ ％ Ｃｏ 硬质合金和金属 Ｗ 上的成核密度没有太大影响。
The nucleation characteristics of diamond films on W C6% Co cemented carbide, metal W and single-crystal Si wafers were investigated. The experimental results show that the diamond films have different nucleation characteristics and nucleation mechanisms on the above substrate materials. The particle size of the diamond powder used for substrate grinding pretreatment has a great influence on the nucleation density of diamond on the single crystal Si wafer but not too much on the nucleation density of WC-6% Co cemented carbide and metal W influences.