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通过射频反应溅射法在Si(1 1 1 )衬底上制备了不同Cu掺杂量的ZnO薄膜 .室温下测量了样品的光致发光 (PL)谱 ,所有样品的PL谱中均观察到 4 35nm左右的蓝光发光带 ,该发光带的强度与Cu掺杂量和溅射功率有关 .当溅射功率为 1 5 0W ,Cu掺杂量为 2 5 %时 ,ZnO薄膜的PL谱中出现了较强的蓝光双峰 ,而溅射功率为 1 0 0W ,Cu掺杂量为1 5 %时 ,出现了位于 4 37nm(2 84eV)处较强的蓝光峰 ,后者的取向性较好 .还研究了掺杂量和溅射功率对发光特性的影响 ,并对样品的蓝光发光机制进行了探讨
ZnO thin films with different Cu doping levels were prepared on Si (111) substrates by radio frequency reactive sputtering.The photoluminescence (PL) spectra of the samples were measured at room temperature and the PL spectra of all the samples were observed 4 about 35nm, the intensity of which is related to the Cu doping amount and the sputtering power.When the sputtering power is 150W and the doping amount of Cu is 25%, the PL spectrum of the ZnO thin film appears A strong blue peak was observed at 437nm (2 84eV) with a sputtering power of 100W and a Cu doping amount of 15%. The latter showed good orientation The effects of doping amount and sputtering power on the luminescence properties were also studied, and the blue luminescence mechanism of the samples was also discussed