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要制备噪声性能具有目前水平的GaAsFET,就要求高质量的GaAs外延层。本文叙述了三种器件评定技术,它能够确定材料质量,特别是有源n型层与缓冲层,或与半绝缘衬底之间界面的质量。本文的主要目的是积累工作器件结构中充足的数量和质量的材料数据,从而能设计出材料的评定技术,以避免目前为检验原材料的质量而要制备一种器件的工序。向材料部门提供的数据资料,使材料生长工艺得到了改善,生产的器件在8GHz下噪声系数为1.4dB。
To produce GaAsFETs with current levels of noise performance requires high quality GaAs epilayers. This article describes three device qualification techniques that determine the quality of a material, particularly the quality of the interface between the active n-type and buffer layers, or with a semi-insulating substrate. The main purpose of this paper is to accumulate sufficient quantity and quality of material data in the working device structure so that material evaluation techniques can be designed to avoid the current process of preparing a device for testing the quality of raw materials. The material data provided to the materials department improved the material growth process and produced a noise figure of 1.4 dB at 8 GHz.