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本文介绍了采用高温热台显微镜,通过二次曝光显微摄影,测定 KTP各晶面生长速度的方法。由于记录胶片易于长期保存及易进行反复精确测量,使蕾方法具有其它方法所不具备的优点。本文首先提出的间接测量法解决了测定低级晶族晶体的各晶面生长速度所遇到的困难,为晶体生长动力学的研究提供了一种有用的实验手段。
This article describes the method of measuring the growth rate of KTP crystal planes by using a high-temperature hot stage microscope through double-exposure microscopy. As the record film is easy to long-term preservation and easy to repeat the measurement accuracy, the bud method has the advantages of other methods do not have. The indirect measurement method first proposed in this paper solves the difficulties encountered in the determination of the growth rate of each crystal plane of the lower-level crystalline silicon crystals and provides a useful experimental method for the study of crystal growth kinetics.