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研究了响应波长在 15 μm附近的超长波GaAs AlGaAs量子阱红外探测器在不同外加偏压下的光电流谱特性 .光电流谱上的两个主要由于阱宽随机涨落而呈现为高斯线形的响应峰被分别指认为量子阱基态E0 到第一激发态E1 和第三激发态E3的跃迁 .跃迁峰随着器件上外加偏压的增大而出现线性红移现象 ,认为这种变化起源于激发态与基态对量子阱结构中势变化敏感性的不同 ,采用传输矩阵方法并考虑到电子交互作用修正进行的理论计算在定量上解释了实验结果 .
The photocurrent spectra of ultra-longwave GaAs AlGaAs quantum well infrared detectors with wavelength of 15 μm were studied under different applied bias voltages.The two photocurrent spectra mainly appeared as Gaussian linear due to the random fluctuation of well width The response peaks are respectively identified as transitions of the quantum well ground state E0 to the first excited state E1 and the third excited state E3.The transition peak appears as a linear redshift as the applied bias voltage on the device increases and is believed to originate in The sensitivity of the excited state and the ground state to the potential change in the quantum well structure is different, and the theoretical calculation using the transfer matrix method and considering the electronic interaction correction explains the experimental results quantitatively.