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瑞萨电子计划上市SiC(碳化硅)功率半导体。耐压600 V的SiC肖特基势垒二极管(SiC-SBD)“RJS6005TDPP”将从2011年3月底开始样品供货。除了空调等白色家电外,预计还可用于通信基站和服务器等配备的PFC(功率因数校正)
Renesas Electronics plans to launch SiC (silicon carbide) power semiconductors. SiC Schottky Barrier Diodes (SiC-SBD) “RJS6005TDPP” with 600 V withstand voltage will be sampling from the end of March 2011. In addition to air conditioners and other white goods, it is expected to be used in communication base stations and servers equipped with PFC (Power Factor Correction)