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一、引言离子镀(Ion Plating)是由D.M.Mattox于1963年首先提出,经过二十年的试验研究而发展起来的现代镀膜技术。它是在真空室中使气体或被蒸发物质离化,在气体离子或被蒸发物质离子冲击作用的同时把蒸发物或其反应产物蒸镀在基体上的方法。在离子镀的过程中,气体或被蒸发的金属原子进入等离子区有一部分被电离,离子受到电场的加速作用对准基体加速前进,因此入射到基板时就带有较高的能量,在此,膜层的成核与生长所需的
I. Introduction Ion Plating (Ion Plating) is first proposed by D.M. Mattox in 1963, after two decades of experimental research and development of modern coating technology. It is a method of ionizing gas or vaporized material in a vacuum chamber and evaporating the vaporized product or its reaction product onto the substrate while gas ions or ions of the vaporized material are impacted. During the ion plating process, a part of the gas or the evaporated metal atom is ionized into the plasma region, and the ions are accelerated by the electric field to accelerate toward the substrate. Therefore, when the gas is incident on the substrate, the energy is higher. The film is required for nucleation and growth