用二次离子质谱、剖面透射电镜、高分辨电镜以及化学增强腐蚀法表征了低剂量 SIMOX圆片的结构特征 .结果显示 ,选择恰当的剂量能量窗口 ,低剂量 SIMOX圆片表层 Si单晶质量好、线缺陷密度低埋层厚度均匀、埋层硅岛密度低且硅 /二氧化硅界面陡峭 .这些研究表明 ,低剂量 SIMOX圆片制备是很有前途的 SOI制备工艺 The structural characteristics of low-dose SIMOX wafers were characterized by SIMS, TEM, high-resolution electron microscope and chemical-enhanced etching. The results show that the SIMOS wafers have good quality , Uniform line defect density and low buried layer thickness, low buried silicon island density and steep silicon / silicon dioxide interface.These studies show that low dose SIMOX wafer preparation is a promising SOI preparation process