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我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。
We have successfully fabricated four-cycle GaAs / Si O2 superlattices on a p-Si substrate by RF magnetron sputtering and achieved high-resolution electron microscopy. The amorphous GaAs layer in the superlattice was partially crystallized by rapid annealing at 80 ℃. The structure of the as-deposited GaAs layer was characterized by Raman scattering spectrum.