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A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology.The threshold current of the device is below 13 mA.The output power exceeds 10 mW at 0V bias when the injection current of the distributed feedback laser is 100 mA at 25℃.The side mode suppression ratio is over 50 dB.A 32Gb/s eye diagram is measured with a 3.5V_(PP) nonreturn-to-zero pseudorandom modulation signal at —2.3 V bias.A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
A 32 Gb / s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10 mW at 0V bias when the injection current of the distributed feedback laser is 100 mA at 25 ° C. The side mode suppression ratio is over 50 dB. A 32Gb / s eye diagram is measured with a 3.5V_ (PP) nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.