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致密、纯钙钛矿结构的ＰＺＴ（５０／５０）铁电薄膜已用ＭＯＤ工艺（金属有机物热分解工艺）获得．通过优化原料的提纯和合成工艺，消除了原料中微量杂质离子，控制ＰＺＴ先体溶液合成时的环境温度，制得透明、稳定的锆钛酸铅先体溶液．采用多次甩胶成膜法，经４００～５００℃热处理，在Ｐｔ／ＳｉＯ２／Ｓｉ衬底上制得ＰＺＴ（５０／５０）薄膜，膜厚５２０ｎｍ，其介电常数为２７０，损耗角正切为０．０３５（１ｋＨｚ，０．０５Ｖ测试电压），其绝缘电阻率为１０～１００ＴΩ·ｃｍ，剩余极化强度为２０．６μＣ／ｃｍ２，饱和极化强度为２７．７μＣ／ｃｍ２，矫顽场强为８０ｋＶ／ｃｍ
The dense, pure perovskite PZT (50/50) ferroelectric thin film has been obtained using the MOD process (metal-organic thermal decomposition process). By optimizing the purification and synthesis of raw materials, the trace impurity ions in the raw materials are eliminated and the ambient temperature during the synthesis of PZT precursor solution is controlled to obtain a transparent and stable lead zirconate titanate precursor solution. PZT (50/50) thin film was prepared on Pt / SiO2 / Si substrate by heat-treatment at 400-500 ℃ for several times. The dielectric constant was 270 and the loss tangent was 0.035 (1kHz, 0.05V test voltage), the insulation resistivity of 10 ~ 100TΩ · cm, the remanent polarization of 20.6μC / cm2, the saturation polarization of 27.7μC / cm2, coercive field strength 80kV / cm