一、前言半导体SiC在热、化学、机械等方面是一种非常稳定的物质,正在进一步研制作为高温、高输出功率用的电子材料。SiC具有很大的禁带宽度及各种多型体而引入注目,随着可见光发光二极管的发展,它正在成为发展全可见光领域发光材料的向往目标。尽管在实际应用方面经过了长期的努力,可是目前仍停留在研究阶段,其主要原因是由于制造晶体的难度很大,迄今虽然用各种生长法制成了晶体,但尚未得到一种纯度高、晶体大的生长方法。此外,多型体的选择及掺杂量的控制也是个棘手的问题。对SiC而言,在3C构造的闪锌矿结构与 I. INTRODUCTION Semiconductor SiC is a very stable material in terms of heat, chemistry and mechanics and is being further developed as an electronic material for high temperature and high output power. With its large band gap and various polytypes, SiC attracts attention. With the development of visible light-emitting diodes, SiC is becoming the target of developing luminescent materials in the field of all-visible light. Despite its long-term practical application, it remains at the research stage for the time being. The main reason is that due to the difficulty of manufacturing crystals, so far, although crystals have been made by various growth methods, Crystal growth method. In addition, the choice of polytype and the amount of doping control is also a thorny issue. For SiC, the structure of sphalerite at 3C is constructed