利用喇曼光谱研究了不同温度下在 Si(1 0 0 )衬底上异质外延 Ge层由于扩散引起的 Ge/Si异质结界面互混以及表面活化剂 Sb对其的影响 .结果表明表面活化剂 Sb的存在大大抑制了界面的互扩散 ,在 650℃下也没有观察到明显的界面互混 .没有 Sb时 ,在 50 0℃下已存在一定程度的界面互混 ,界面互混程度随外延层生长温度的增高而增强 .这种互扩散的差别与成岛生长时应变释放有关 Raman spectroscopy was used to study the intermolecular intermixing of Ge / Si heterojunction interface due to diffusion in heteroepitaxial Ge layer on Si (100) substrate at different temperatures and the effect of surfactant Sb on it. The results show that the surface The presence of activator Sb greatly inhibits the interdiffusion of interfacial intermetallics and no obvious interfacial intermixing is observed at 650 ° C. In the absence of Sb, some interfacial intermixes exist at 50 0 ° C, Epitaxial layer growth temperature increased and enhanced.This difference in mutual proliferation and island growth strain release