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采用分别限制非对称波导结构,将光场从对称分布变为非对称分布,降低了载流子光吸收损耗,并允许p型区具有更高的掺杂水平,从而使器件电阻降低.对GaAsP/GaInP张应变单量子阱(SQW)非对称波导结构激光器的光场特性进行了理论分析,设计了波导层厚度,并制作了波长为808 nm的无铝有源区大功率半导体激光器.器件综合特性测试结果为:腔长900μm器件的阈值电流密度典型值为400 A/cm2,内损耗低至1.0 cm-1;连续工作条件下,150μm条宽器件输出功率达到6 W,最大斜率效率为1.25 W/A.器件激射波长为807.5 nm,平行和垂直结的发散角分别为3.0°和34.8°.20~70℃范围内特征温度达到133 K.结果表明,分别限制非对称波导结构是降低内损耗,提高大功率半导体激光器特性的有效措施.
The asymmetric waveguide structure is used to change the optical field from symmetrical to asymmetric, which reduces the carrier optical absorption loss and allows the p-type region to have a higher doping level to reduce the device resistance. / GaInP strain-gauge single-quantum-well (SQW) asymmetric waveguide structure of a laser was theoretically analyzed, the thickness of the waveguide layer was designed, and an aluminum-free active region high power semiconductor laser with a wavelength of 808 nm was fabricated. The results of the characteristic test are as follows: The threshold current density of the device with a cavity length of 900μm is 400 A / cm2 and the internal loss is as low as 1.0 cm-1. Under continuous operating conditions, the output power of a 150μm-wide device reaches 6 W and the maximum slope efficiency is 1.25 W / A. The lasing angle of the device is 807.5 nm, and the divergence angles of the parallel and vertical junctions are 3.0 ° and 34.8 °, respectively, and the characteristic temperature reaches 133 K in the range of 20-70 ° C. The results show that the asymmetric waveguide structure is reduced Internal loss, improve the characteristics of high-power semiconductor laser effective measures.