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分析了大功率晶体管（ＧＴＲ）饱和区伏安特性，测量了不同驱动条件和工作温度下ＧＴＲ的集电极压降和集电极电流的关系．结果表明，存在一个饱和压降阈值，超过这个阈值后，过流将产生．据此设计了一种快速有效的过流保护电路．
The voltammetric characteristics of the saturated region of high power transistor (GTR) were analyzed. The relationship between the collector voltage drop and the collector current of GTR was measured under different driving conditions and working temperature. The results show that there is a saturation voltage drop threshold beyond which overcurrent will develop. Accordingly, a fast and effective over-current protection circuit is designed.