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利用射频反应共溅射方法制备了Y掺杂Al2O3电介质薄膜,用掠入射x射线衍射检测了薄膜的结构,用高分辨率扫描电子显微镜(HRSEM)、原子力显微镜(AFM)观察了薄膜断面和表面形貌,用高频C_V和变频C_V及J_V测量了样品的电学特性.结果表明,Y的掺入使电介质薄膜的介电常数k有了很大提高(8.14—11.8),并体现出了较好的介电特性.分析认为与氧具有较大电负性差的Y离子的加入,增大了薄膜中的金属—氧键(M—O)的强度;同时,Y的加入使Al2O3的结构和原子配位发生了改变,从而提高了离子极化对薄膜介电常数的贡献.退火前后的XRD谱均显示薄膜为非晶态;HRSEM断面和AFM形貌像显示所制备的薄膜非常平整,能够满足器件要求.
Y-doped Al2O3 dielectric thin films were prepared by radio frequency reactive co-sputtering method. The structure of the films was examined by grazing incidence X-ray diffraction. The cross-section and surface of the films were observed by high resolution scanning electron microscopy (HRSEM) and atomic force microscopy (AFM) The electrical properties of the samples were measured by high-frequency C_V and variable-frequency C_V and J_V.The results show that the dielectric constant k of dielectric films has been greatly improved by the incorporation of Y (8.14-11.8) Good dielectric properties.Analysis shows that the addition of Y ions with a great electronegativity difference with oxygen increases the intensity of the metal-oxygen bond (M-O) in the film. Meanwhile, the addition of Y makes the structure and The atomic coordination changed, which increased the contribution of ion polarization to the dielectric constant of the film.The XRD spectra of the film before and after annealing showed that the film was amorphous.The HRSEM cross section and AFM morphology images showed that the prepared film was very smooth, Meet the device requirements.