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１ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｉｎｌａｙｅｒｅｐｉｔａｘｙｗｉｔｈｈｉｇｈｒｅｓｉｓｔｉｖｉｔｙｉｓａｋｅｙｔｅｃｈｎｉｑｕｅｔｏｄｅｖｅｌｏｐＩＣ（ｉｎｔｅｇｒａｔｅｄｃｉｒｃｕｉｔ）ｗｉｔｈｈｉｇｈｉｎｔｅｇｒａｔｉｏｎａｎｄｈｉｇｈｐｅｒ...
Approach to Weaken Auto-doping Effect in Si CVD Epitaxy by Compensation in Opposite Dir
【摘 要】
：
１ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｉｎｌａｙｅｒｅｐｉｔａｘｙｗｉｔｈｈｉｇｈｒｅｓｉｓｔｉｖｉｔｙｉｓａｋｅｙｔｅｃｈｎｉｑｕｅｔｏｄｅｖｅｌｏｐＩＣ（ｉｎｔｅｇｒａｔｅｄｃｉｒｃｕｉｔ）ｗｉｔｈｈｉｇｈｉｎｔｅｇｒａｔｉｏｎａｎｄｈｉｇｈｐｅｒ...
【机 构】
：
HebeiUniv
【出 处】
：
Rare Metals
【发表日期】
：
1998年4期
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