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近20年来,半导体薄层、超薄层异质外延技术如分子束外延、金属有机物化学汽相淀积等得到了巨大发展,用这种技术生长的AlGaAs/GaAs,InGaAsP/InP材料和异质结构已成功地制备出了高性能的电子和光电子器件,引起了世界上物理学家和工程技术专家们的极大兴趣。本文将简要地综述近几年来半导体材料异质外延技术的新进展。并对目前存在的问题及其进一步发展做初步讨论。
In recent 20 years, the semiconductor thin layer, ultra-thin layer heteroepitaxial epitaxy techniques such as molecular beam epitaxy, metal organic chemical vapor deposition has been a tremendous development, using this technology AlGaAs / GaAs, InGaAsP / InP materials and heterogeneous The structure has successfully produced high-performance electronic and optoelectronic devices, arousing great interest of physicists and engineering experts in the world. This article will briefly summarize recent advances in heteroepitaxial technology for semiconductor materials. And preliminary discussion on the existing problems and their further development.