在三维器件数值模拟的基础上,以经典的双指数模型为原型通过数值拟合得到了单粒子效应瞬态电流脉冲的表达式,在理论分析的基础上,引入了描述晶体管偏压和瞬态电流关系的方程,并将其带入电路模拟软件HSPICE中进行SRAM存储单元单粒子翻转效应的电路模拟,最后分别使用电路模拟和混合模拟两种方法得到了存储单元的LET阈值,通过在精度和时间开销上的对比,验证了这种模拟方法的实用性. Based on the 3D numerical simulation of the device, the expression of the single-event transient current pulse is obtained by the classical double exponential model as a prototype. Based on the theoretical analysis, Current equations, and bring them into the circuit simulation software HSPICE SRAM single cell flip-flop effect of the circuit simulation, and finally using the circuit simulation and hybrid simulation of two methods were obtained LET threshold memory cells through the accuracy and The comparison of the time cost proves the practicability of this simulation method.