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SnO_2 nanocrystal and rare-earth Eu～(3+) ion co-doped SiO_2 thin films are prepared by sol-gel and spin coating methods.The formation of tetragonal rutile structure SnO_2 nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy.Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups,and it is found that the emission intensity from the 5 D 0 7 F 2 transitions of the Eu～(3+) ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO_2 nanocrystals to nearby Eu～(3+) ions.The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer.The luminescence intensity ratio of Eu～(3+) ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu～(3+) ions in the sol-gel thin film,which are further discussed based on temperature-dependent photoluminescence measurements.
SnO 2 nanocrystal and rare-earth Eu 3+ ion co-doped SiO 2 thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO 2 nanocrystals with a uniform distribution is confirmed by X-ray diffraction and Transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the 5 D 0 7 F 2 transitions of the Eu ~ (3+) ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO 2 nanocrystals to nearby Eu ~ (3+) ions. These influences of the amounts of Sn and the post-extraction temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu ~ (3+) ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu ~ (3+) ions in the sol-gel thin film, which ar e further discussed based on temperature-dependent photoluminescence measurements.