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在电子电路分析与设计中,对非线性器件常用一个电路模型等效。如晶体三极管小信号运用时的“h”参数、“z”参数、“r”参数……等效电路模型。但在整流、检波以及开关电路中,一般运用范围都属大信号,如一个晶体三极管倒相电路的信号范围即由饱和到截止。因此有必要研究晶体三极管在大信号运用时等效电路模型。晶体三极管大信号模型有线性与非线性之分,而在分析电路时前者较优越。因其线性化后有关线性电路分析方法可被应用。且有时可直接用数值计算求解,这在现代电子计算机发展的条件下显得更为突出。
In electronic circuit analysis and design, a circuit model is commonly used for nonlinear devices. Such as the use of small crystal transistor signal “h” parameters, “z” parameters, “r” parameters ...... Equivalent circuit model. However, rectification, detection and switching circuits, the general scope of use are large signals, such as a crystal transistor inverter circuit signal range from the saturation to the end. Therefore, it is necessary to study the equivalent circuit model of the transistor in the application of large signal. Transistor transistor large signal model has a linear and non-linear points, and in the analysis of the circuit when the former superior. Because of its linearization after the linear circuit analysis methods can be applied. And sometimes can be solved directly by numerical calculation, which is more prominent in the development of modern electronic computers.