最近,美国国家航空和航天局刘易斯研究中心的 Leon 等人研究了用 MOCVD 方法在事先蚀刻成锯齿形的 n—GaAs 表面外延 p型 GaAs 以形成 p—n 结,改进了太阳电池的性能。锯齿形表面 GaAs 太阳电池,比平面型器件有很多优点。由于在锯齿形表面上入射光的多次反射和多次吸收,提高了器件的光吸收率,降低了反射损失,同时还提高了器件 Recently, Leon et al at the Lewis Research Center at the National Aeronautics and Space Administration (NASA) studied the use of MOCVD to etch p-type GaAs on zig-zagged n-GaAs surfaces to form p-n junctions to improve solar cell performance. Serrated surface GaAs solar cells have many advantages over planar devices. Due to the multiple reflections and multiple absorptions of incident light on the serrated surface, the light absorption of the device is increased, the reflection loss is reduced, and the device