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在TFT小型化趋势下,需要进一步提高氢化非晶硅薄膜晶体管的TFT特性,尤其是开态电流特性。本文结合生产实际,阐述了工艺上改善氢化非晶硅开态电流特性的方法,包括提高单位面积栅绝缘层电容和改善载流子迁移率。实验结果表明,降低高速沉积栅绝缘层的气压和厚度,能有效提高单位面积栅极绝缘层电容。增加低速沉积栅绝缘层的Si/N比及优化氢等离子体处理工艺,可以有效改善载流子迁移率。
Under the trend toward miniaturization of TFTs, there is a need to further improve the TFT characteristics of hydrogenated amorphous silicon thin film transistors, especially the on-state current characteristics. In this paper, the method of improving the on-state current characteristics of hydrogenated amorphous silicon is described in terms of production practice, including increasing the capacitance per unit area of the gate insulating layer and improving the carrier mobility. The experimental results show that reducing the pressure and thickness of the high-speed deposited gate insulating layer can effectively increase the capacitance of the gate insulating layer per unit area. Increasing the Si / N ratio of the low-speed deposited gate insulating layer and optimizing the hydrogen plasma treatment process can effectively improve the carrier mobility.